Project Description

Product Specification of JD27E2

OVERVIEW

The JD27E2 is an 8” silicon wafer of JD67E2 die. The JD67E2 is a current source pixel array backplane designed for realizing emissive Micro LED and OLED products. Up to 2.0 Amps of current is available for high brightness and global dimming for high contrast. Digital modulation allows for stable color. Pixel current and voltage are fully programmable.

The JD27E2 is ideally suited for µLED and OLED applications such as AR and HUDs.

FEATURES

  • 0.7” active area diagonal
  • 15.36 mm x 8.64 mm die active area
  • 1920 x 1080 resolution (mono)
  • 960 x 540 resolution (color)
  • 4 sub-pixels with programmable current and voltage
  • Digital modulation per pixel
  • Current source pixel architecture
  • 8.0 µm pixel pitch
  • 1.2 µm pixel gap
  • 2.0 Amps total current
  • 0.2 to 1.0 µA per pixel
  • 18 kÅ top metal (Al) thickness
  • Known Good Die map
  • Large common cathode return
  • 180 nm CMOS

GENERAL SPECIFICATION

Specifications
Process Technology180 nm CMOS
Die Size13.650 x 19.050 mm²
Gross Dice per 8” Wafer92
Active Area Diagonal0.7”
Active Area15.36 mm x 8.64 mm
Resolution (Monochrome)1920 x 1080
Resolution (Color)960 x 540
Pixel Pitch8.0 μm
Pixel Gap1.2 μm
Pixel AluminumArea6.8 μm x 6.8 μm
Total Current Drive2.0 Amps
Current Drive per Pixel0.2 ~ 1.0 μA
Pixel Power Source TypeCurrent Drive
Top Metal (Al) Thickness18 kÅ
Constant Supply SchemeCommon Cathode Return