Project Description
Product Specification of JD27E2
OVERVIEW
The JD27E2 is an 8” silicon wafer of JD67E2 die. The JD67E2 is a current source pixel array backplane designed for realizing emissive Micro LED and OLED products. Up to 2.0 Amps of current is available for high brightness and global dimming for high contrast. Digital modulation allows for stable color. Pixel current and voltage are fully programmable.
The JD27E2 is ideally suited for µLED and OLED applications such as AR and HUDs.
FEATURES
- 0.7” active area diagonal
- 15.36 mm x 8.64 mm die active area
- 1920 x 1080 resolution (mono)
- 960 x 540 resolution (color)
- 4 sub-pixels with programmable current and voltage
- Digital modulation per pixel
- Current source pixel architecture
- 8.0 µm pixel pitch
- 1.2 µm pixel gap
- 2.0 Amps total current
- 0.2 to 1.0 µA per pixel
- 18 kÅ top metal (Al) thickness
- Known Good Die map
- Large common cathode return
- 180 nm CMOS
GENERAL SPECIFICATION
| Specifications | |
|---|---|
| Process Technology | 180 nm CMOS |
| Die Size | 13.650 x 19.050 mm² |
| Gross Dice per 8” Wafer | 92 |
| Active Area Diagonal | 0.7” |
| Active Area | 15.36 mm x 8.64 mm |
| Resolution (Monochrome) | 1920 x 1080 |
| Resolution (Color) | 960 x 540 |
| Pixel Pitch | 8.0 μm |
| Pixel Gap | 1.2 μm |
| Pixel AluminumArea | 6.8 μm x 6.8 μm |
| Total Current Drive | 2.0 Amps |
| Current Drive per Pixel | 0.2 ~ 1.0 μA |
| Pixel Power Source Type | Current Drive |
| Top Metal (Al) Thickness | 18 kÅ |
| Constant Supply Scheme | Common Cathode Return |